Download full article : PDF
Numerical Analysis of Temperature Dependence on Power Conversion Efficiency (PCE) of GaN/p-Si Based Solar Cells using PC1D simulation
1School of Physics and Material Studies, Faculty of Applied Sciences, Universiti Teknologi MARA, Shah Alam, Selangor, Malaysia
2School of Physics and Material Studies, Faculty of Applied Sciences, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia, Shah Alam, Selangor, Malaysia
*Email Address : mzmy83@gmail.com
Abstract : The purpose of constructing different temperatures on GaN/p-Si based solar cells is to improve the opto-electronic characteristics and efficiency of this photovoltaic cell. The performance of the GaN/p-Si solar cell was evaluated by exhibiting it in the Personal Computer One Dimensional (PC1D) numerical simulation program. In this work, we used the PC1D simulator to optimize the short circuit current, open circuit voltage, output power, fill factor, and quantum efficiency (QE) of a III-nitride solar cell to study the impact of different temperatures and incorporate polarization effects on the structure of the optimized GaN with Si based solar cells. The optimal performance of a GaN/p-Si-based solar cell can be attained at the lowest temperature, and the QE of the solar cell might drop as the temperature increases. Wide bandgap III-nitride materials, on the other hand, have several inherent features that make them particularly appealing for high-temperature applications. The results reveal that the growth temperature has a significant impact on the structural, optical, and photovoltaic properties of the developed n-GaN/p-Si solar cell. Furthermore, a thermal analysis imparted fresh insights and strategies for improving the device performance of PV solar cells. The best cell performance is obtained by the solar cell with 0.1 μm n-GaN and 250 μm p-Si layers and it exhibits open-circuit voltage (Voc) of 650 mV, fill factor (FF) of 73.11%, short-circuit current density (Jsc) of 60.30 mA/cm2 and power conversion efficiency (η) of 28.65 %.
Keywords : Gallium nitride, Silicon, growth temperature, PC1D, Solar Cells