Download full article : PDF
Simulation of Metal Contacts on the Al Doped ZnO Photoconductive Sensor
1jsg, UITM, permatang pauh, penang, Malaysia
2Faculty of Electrical Engineering, Universiti Teknologi MARA Cawangan Pulau Pinang, Permatang Pauh, Pulau Pinang, Malaysia
*Email Address : mzmy83@gmail.com
Abstract : In this project, we study and investigate the effect of metal contacts on the Al doped ZnO photoconductive sensor. Metal contacts such as Silver (Ag), Gold (Au), Palladium (Pd), Platinum (Pt) were used in this work. A Silvaco Atlas simulator was used to develop Al doped ZnO photoconductive strucure. The I-V characteristics of photoconductive carrier at different operating temperature (100K, 300K and 500K) were investigated. Various carrier concentration (1e15cm-3, 1e17cm-3 until 1e20cm-3) were used in this project. We found that the device with Pt contact shows lowest current response at various temperatures compared than other metal contacts. Photoconductive with Pt contact also exhibited lowest current response for all different carrier concentration doping.
Keywords : metal contact, photoconductive sensor, Al:ZnO, simulation, IV characteristics